Lateral transistor with elongated emitter

Details Lateral transistor with elongated emitter Lateral transistor with elongated emitter

1988-12-28

1990-08-21

Wojciechowicz, Edward J.

357 35, 357 55, 357 68, H01L 2972

Patent

active

049511084

ABSTRACT:
The invention relates to an integrated circuit having a lateral transistor, whose emitter region has a depth and a doping level such that the diffusion length of the minority charge carriers vertically injected into this region is greater than or equal to the thickness of the said region, the ratio between the surface of the emitter region and that of the electrical connection emitter zone being at least equal to 20. The current amplification .beta. of such a transistor is considerably increased by giving the emitter region an elongate shape in a longitudinal direction, the ratio between the largest longitudinal dimension and the largest transversal dimension being at least equal to 5.

REFERENCES:
patent: 4231059 (1980-10-01), Hower et al.
patent: 4654687 (1987-03-01), Hebert

Affiliated with

Also associated with

Rating

Lateral transistor with elongated emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lateral transistor with elongated emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lateral transistor with elongated emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1682371