Semiconductor process integration of a guard ring structure

Details Semiconductor process integration of a guard ring structure Semiconductor process integration of a guard ring structure

1998-08-05

2000-02-08

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Field plate electrode

438270, 438294, 438279, H01L 2176

Patent

active

060227907

ABSTRACT:
A method is presented for forming a guard ring of a semiconductor device in the termination area in tandem with forming the active area structure of the device. The guard ring is formed using the same processing steps that form the active region structure, at the same time, without requiring additional masking steps or a passivation layer. The guard ring is formed in an opening in the field oxide located in the termination area and is electrically connected to a polysilicon field plate that is located atop a portion of the field oxide region. The guard ring increases the rated voltage of the device without the introduction of a passivation layer.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 5744843 (1998-04-01), Efland et al.
patent: 5795793 (1998-08-01), Kinzer
patent: 5880501 (1999-03-01), Nagai
patent: 5940721 (1999-08-01), Kinzer et al.

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