Method for manufacturing three-terminal oxide superconducting de

Details Method for manufacturing three-terminal oxide superconducting de Method for manufacturing three-terminal oxide superconducting de

1994-12-06

1996-02-27

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Semiconductor device or thin film electric solid-state...

505473, 505410, 505191, 505193, 505701, 505728, 427 62, 427 63, 257 35, 257 39, H01L 3924, H01B 1200

Patent

active

054948916

ABSTRACT:
A superconducting device comprises a substrate, a non-superconducting layer formed in a principal surface of said substrate, an extremely thin superconducting channel formed of an oxide superconductor thin film on the non-superconducting layer. A superconducting source region and a superconducting drain region of a relatively thick thickness are formed of the oxide superconductor at the both sides of the superconducting channel separated from each other but electrically connected through the superconducting channel, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the superconducting channel is connected to the superconducting source region and the superconducting drain region at the higher portions than their one third height portions.

REFERENCES:
patent: 5087605 (1992-02-01), Hegde et al.
patent: 5236896 (1993-08-01), Nakamura et al.
patent: 5322526 (1994-06-01), Nakamura et al.
patent: 5345115 (1994-09-01), Tokuda et al.
Mannhart, J. et al, "Electric Field Effect on Superconducting YBa.sub.2 Cu.sub.3 O.sub.7 -.delta.", Zeitschrift Fur Physik B, vol. 83, No. 3: pp. 307-311 (1991).
Levy, A. et al, "Field-effect Conductance of YBa.sub.2 Cu.sub.3 O.sub.6 ", Journal of Applied Physics, vol. 69, No. 8: pp. 4439-4441, 15 Apr. 1991.

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