Method for writing on archival target and target produced thereb

Details Method for writing on archival target and target produced thereb Method for writing on archival target and target produced thereb

1979-08-22

1981-09-01

Fears, Terrell W.

Static information storage and retrieval

Information masking

Electron beams

315 1, 365105, 365120, G11C 1126

Patent

active

042875722

ABSTRACT:
A method for storing data in an archival memory semiconductor target by providing a masking layer of a conductive material on the surface of an insulative layer upon the top surface of a semiconductor substrate; the material layer is assigned a two-dimensional array of possible data storage sites. The masking layer at those storage sites at which a first binary value is to be stored, is melted; the selected material is one which, at the melting temperature thereof, does not wet the surface of the chosen insulator whereby apertures are formed by the writing electron beam in the masking layer, at energy levels insufficient to evaporate the masking material. The writing beam energy is reduced at the data sites at which data bits of the remaining binary value are to be stored, and does not melt the masking material thereat. The data stored in the target is read by sweeping an electron beam of relatively low energy across the array to induce a flow of current from the semiconductor substrate and of magnitude dependent upon the presence or absence of an aperture in the masking layer at the data site interrogated.

REFERENCES:
patent: 3412220 (1968-11-01), Puppoco

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