Process for the production of a relief structure on a semiconduc

Details Process for the production of a relief structure on a semiconduc Process for the production of a relief structure on a semiconduc

1994-11-23

1996-02-27

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437974, H01L 21266

Patent

active

054948355

ABSTRACT:
The invention relates to a process for the production of a relief structure on a semiconductor material support, by subjecting a wafer of semiconductor material having a planar face to three steps. The first step includes implantation by bombardment of the planar face of the wafer by means of ions, creating gas microbubble areas in the volume of the wafer, each area being positioned with respect to the planar face at a depth dependent on the implantation energy of the ions received by said area, so that all the implanted areas define a profile in the volume of the wafer. The profile defines, on the side of the planar face, an upper region of the wafer constituting a thin film and, on the side opposite to the planar face, a lower region constituting the mass of the substrate. The second step includes joining the planar face of the wafer to a stiffener constituted by at least one rigid material layer. The third step includes heat treating the assembly constituted by the wafer and the stiffener at an adequate temperature to create a separation between the thin film and the mass of the substrate along the profile, the separation leading to a relief structure on the film and to an inverted relief structure on the substrate.

REFERENCES:
patent: 4717683 (1988-01-01), Parrillo et al.
patent: 5196355 (1993-03-01), Wittkower
patent: 5374564 (1994-12-01), Bruel
AE Scientific American, "Binary Optics", W. B. Veldkamp and T. J. McHugh, May 1992, pp. 50-55.

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