Process for making integrated circuit with doped silicon dioxide

Details Process for making integrated circuit with doped silicon dioxide Process for making integrated circuit with doped silicon dioxide

1988-09-30

1990-08-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437 47, 437 52, 437228, 437918, 357 51, H01L 21265

Patent

active

049506200

ABSTRACT:
An integrated circuit which uses vertical current flow through arsenic-implanted oxide films to provide low-current loads. These load elements provide a compact four-transistor SRAM which has very simple fabrication and very low power consumption.

REFERENCES:
patent: 3922708 (1975-11-01), Crowder
patent: 4406051 (1983-09-01), Lizuka
patent: 4575923 (1986-03-01), Arnold
patent: 4755480 (1988-07-01), Yau et al.
News Item which appeared in the Sep. 1988 issue of Semiconductor International (entire text of article included in Information Disclosure Statement).

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