Process for repairing pattern film

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 39, 427140, 430 5, 156643, B05D 306, H05H 146

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active

049504983

ABSTRACT:
This invention is concerned with the method and apparatus for forming a pattern on a substrate. More specifically, it is intended to remove the fringe of the film thinly attached at the sides of the film formed at the time of forming by CVD method and thereby to make a film of high quality. In this invention, by adding the method and means of selectively removing the fringe of the film to the method and device of forming a pattern film on the principle of so-called ion beam CVD method, the method and apparatus of forming a pattern film for making a mask or IC of high quality can be obtained without a problem of the fringe of the film at the sides of the pattern.

REFERENCES:
patent: 4341592 (1982-07-01), Shortes et al.
patent: 4463073 (1984-07-01), Miyauchi et al.
patent: 4489102 (1984-12-01), Olmer et al.
patent: 4503329 (1985-03-01), Yamaguchi et al.
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4649099 (1987-03-01), Oguchi
Patent Abstracts of Japan, vol. 9, No. 19 (E-292) [1742], Jan. 25, 1985.
Patent Abtracts of Japan, vol. 9, No. 193 (E-334) [1916], Aug. 9, 1985.
Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984, pp. 31-34, Tokyo, Jp., K. Gamo et al., "Characteristics of Selective Deposition of Metal Organic Films Using Focused Ion Beams".

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