Doping for low capacitance amorphous silicon field effect transi

Details Doping for low capacitance amorphous silicon field effect transi Doping for low capacitance amorphous silicon field effect transi

1985-08-02

1987-11-03

Wojciechowicz, Edward J.

357 2, 357 4, 357 45, 357 55, H01L 2978

Patent

active

047046236

ABSTRACT:
An amorphous silicon thin film FET is doped and structured to be particularly useful for use in liquid crystal display circuits. In particular, critical FET dimensions are provided along with doping levels and locations which permit optimal reduction of source to gate capacitance, while at the same time, preventing the occurrence of large contact voltage drops. Critical dimensions include active channel length, source-gate overlap, and amorphous silicon thickness. A critical relationship is established amongst these parameters and amorphous silicon doping levels.

REFERENCES:
patent: 4597001 (1986-06-01), Bortscheller et al.
"Silicon TFTs for Flat Panel Displays", by F. Morin and M. LeContellec, Hewlett Packard Journal, (date unknown).
"Amorphous-Silicon Thin-Film Metal-Oxide-Semiconductor Transistors", by Hiroshi Hayama and Masakiyo Matsumura, Applied Physics Letters, vol. 36, No. 9, (May 1980).
"Amorphous Silicon-Silicon Nitride Thin-Film Transistors" by M. J. Powel et al., Applied Physics Letters, vol. 38, No. 10 (May 1981).
"Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels" by A. J. Snell et al., Applied Physics, vol. 24, pp. 357-362 (1981).
"A TFT-Addressed Liquid Crystal Color Display" by M. Sugata et al., (Oct. 1983), Proceedings of the Third International Display Research conference, Paper No. 53.
"Amorphous-Silicon TFT Array for LCD Addressing" by M. V. C. Stroomer, Electronic Letters, vol. 18, No. 20 (1982).
"High Resolution Transparent-Type a-Si TFT LDCs" by K. Suzuki et al., SID Digest, (1983).
"Promise and Challenge of Thin-Film Silicon Approaches to Active Matrices" by A. I. Lakatos, 1982 International Display Research Conference, IEEE, pp. 146-151.
"Application of Amorphous Silicon Field Effect Transistors in Integrated Circuits" by A. J. Snell et al., Applied Physics, vol. A26, PP. 83-86.
den Boer, W., "Determination of Midgap Density of States in a Si:H Using Space-Charge-Limited Current Measurements", Journal of Physics, Paris, vol. 42, C4, pp. 451-458 (1981).
Mackenzie, KD et al., "The Density of States in Amorphous Silicon Determined by Space-Charge-Limited Current Measurements", Philosophical Magazine B, vol. 46, No. 4, pp. 377-389, (1082).
Street, R. A. et. al. "Effects of Doping on Transport and Deep Trapping in Hydrogenated Amorphous Silicon", Applied Physics Letters, vol. 43, pp. 672-674, (Oct. 1983).
Sze, S. M., "Physics of Semiconductor Devices", 1st Edition, Wiley Interscience, p. 276, 1969.
Snell, A. J. et al., "Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels", Applied Physics, vol. 24, pp. 357-362, (1981).
Tuan, H. C. et al., "Dual-Gate a-Si:H Thin Film Transistors", IEEE Electron Device Letters, vol. EDL-3(12), pp. 357-359m, (1982).

Affiliated with

Also associated with

Rating

Doping for low capacitance amorphous silicon field effect transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doping for low capacitance amorphous silicon field effect transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping for low capacitance amorphous silicon field effect transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1676365