Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1998-07-16
1999-11-30
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 66, 257 67, 257 72, 257369, 257903, H01L 2976
Patent
active
059947195
ABSTRACT:
The present invention provides an improved static random access memory which can be manufactured into values as designed by photolithography. Second direct contract for connecting active region and ground line for first and second memory cells is provided at a boundary between the first memory cell and second memory cell. Second direct contact is divided into a plurality of portions.
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patent: 5572480 (1996-11-01), Ikeda et al.
patent: 5841153 (1998-11-01), Kuriyama et al.
Ohkubo et al., 16 Mbit SRAM Cell Technologies for 2.0 V Operation, IEDM, pp. 17.5.1-17.5.4, 1991.
A Split Wordline Cell For 16Mb SRAM Using Polysilicon Sidewall Contacts, Kazuo Itabashi et al., IEDM 91, pp. 477-484.
A 2V-Supply Voltage 16Mb SRAM Cell With Load-Lock-CVD Poly and DCS-WSIX Technologies, A Kawamura et al., 1993 Symposium on VLSI Technology, pp. 67-68.
Ishida Masahiro
Ishigaki Yoshiyuki
Kuriyama Hirotada
Martin-Wallace Valencia
Mitsubishi Denki & Kabushiki Kaisha
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