Suppression of hillock growth through multiple thermal cycles by

Details Suppression of hillock growth through multiple thermal cycles by Suppression of hillock growth through multiple thermal cycles by

1986-04-21

1987-11-03

Roy, Upendra

Fishing, trapping, and vermin destroying

437 14, 437196, 437247, 357 67, 148DIG140, H01L 21265

Patent

active

047043679

ABSTRACT:
A technique for suppressing hillock growth in metal films on integrated circuits through multiple thermal cycles by argon implantation. Although it was known that ion implantation of many species such as arsenic suppressed the growth of hillocks in metal films through one thermal cycle, it was discovered that only one of the proposed ions, argon, would suppress hillock formation for multiple subsequent thermal cycles. For the other species, hillock formation would reoccur after multiple cycles. This characteristic is important for double layer metal (DLM) processes to prevent interlayer shorting.

REFERENCES:
patent: 4520554 (1985-06-01), Fisher
patent: 4536223 (1985-08-01), Faith, Jr.
Ashok et al., Thin Solid Films 126 (1985) 251.
Cadien et al., J. Vac. Sci. Technol. B-2 (1984) 82.
Hikosaka et al. Rad. Effects, 51 (1980) 253.
Whitlow et al., J. Appl. Phys. 58 (1985) 3246.
Y. Kamei et al., "Ion Implanted Double Level Metal Process," IEDM Technical Digest, (1984), pp. 138-141.

Affiliated with

Also associated with

Rating

Suppression of hillock growth through multiple thermal cycles by does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Suppression of hillock growth through multiple thermal cycles by, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Suppression of hillock growth through multiple thermal cycles by will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1674320