Etching a substrate: processes – Forming or treating an article whose final configuration has...
Patent
1994-07-15
1996-02-27
Powell, William
Etching a substrate: processes
Forming or treating an article whose final configuration has...
216 41, 216 56, 1566471, 1566491, 1566511, 1566441, 1566571, B44C 122
Patent
active
054941792
ABSTRACT:
The invention is a field-emission element having a cathode with a sharp apex and a gate with an aperture diameter less than 1 .mu.m that is fabricated by covering a silicon substrate with a silicon oxide layer, forming an etching mask of 1.0 .mu.m diameter from a silicon oxide layer by photolithography, wet-etching the etching mask to form a minute etching mask of less diameter, dry etching the substrate to form a cylindrical solid structure, followed by anisotropic etching to form a couple of minute conical-shaped structures facing each other and connected by their respective tops, vacuum evaporating around the minute structures an insulating layer and thereon a conducting layer for use as a gate electrode, and etching the minute structure to lift off the upper part of the minute conical shaped structures.
REFERENCES:
patent: 4572765 (1986-02-01), Berry
patent: 4943343 (1990-07-01), Bardai et al.
Betsui, Keiichi, "Fabrication and Operation of Silicon Micro-Field-Emitter-Array," Electro Information Communication Society: Fall 1990 Meeting.
Gray, H. F., "Silicon Field Emitter Array Technology," Proc. Intern. R-Field Emission Symposium, pp. 111-119 (1982).
Spindt, C. A. et al., "Physical properties of thin-film field emission cathodes with molybdenum cones," pp. 5248-5263, Journal of Applied Physics, vol. 27, No. 12, Dec. 1976.
Hori Yoshikazu
Koga Keisuke
Matsushita Electric - Industrial Co., Ltd.
Powell William
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