Photoelectric conversion device

Details Photoelectric conversion device Photoelectric conversion device

1988-02-22

1989-03-07

James, Andrew J.

357 4, 357 59, 357 15, H01L 2712, H01L 2948, H01L 2714, H01L 2904

Patent

active

048110698

ABSTRACT:
A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni, a transparent electrode formed of ITO or the like, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode. A bias voltage is applied across the metallic electrode and the transparent electrode so that the metallic electrode is biased to a negative potential relative to the transparent electrode. A Schottky barrier formed in the interface between the metallic electrode and the i-type hydrogenated amorphous silicon layer is used as an electron blocking layer. Thus, the dark current is suppressed on a low level and the photoelectric conversion device is able to operate at a high S/N ratio.

REFERENCES:
patent: 4419696 (1983-12-01), Hamano et al.
patent: 4523214 (1985-06-01), Hirose et al.
IEEE Transactions on Components, Hybrids and Manufacturing Tech. vol. CHMT-7 No. 4, 12/84, "High Speed and High Resolution . . . Photodetector Array" K. Suzuki et al., pp. 423-428.

Affiliated with

Also associated with

Rating

Photoelectric conversion device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoelectric conversion device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectric conversion device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1672765