Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Patent
1998-04-28
1999-11-30
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
257 13, 257 85, 372 43, H01L 2100
Patent
active
059941545
ABSTRACT:
There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconductor layer, a highly doped, second semiconductor layer formed on the first insulating layer, a third semiconductor layer formed on the second semiconductor layer, a device isolation region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the device isolation region defining a device formation region therein, the device formation region being formed with a recess starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a second insulating layer covering an inner sidewall of the recess therewith, a multi-layered structure formed within the recess, the multi-layered structure having at least a quantum well layer and a contact layer, a connection region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a first electrode formed on the connection region, a second electrode formed on the contact layer, and a light-impermeable region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the light-impermeable region being formed outside the recess. The optical semiconductor device can be fabricated in a planar structure, and has an improved photoelectric transfer efficiency. The optical semiconductor device makes it possible to integrate a light-emitting device and a light-receiving device on a common chip with the devices being optically insulated from each other.
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Xiao et al, Room-temperature 1.3 um electroluminescence from strained Si.sub.1-x Ge.sub.x /Si quantum wells, Mar. 5, 1992, pp. 3177-3179.
Chaudhuri Olik
NEC Corporation
Wille Douglas A.
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