Process for bonding die to substrate using a gold/silicon seed

Details Process for bonding die to substrate using a gold/silicon seed Process for bonding die to substrate using a gold/silicon seed

1988-03-14

1989-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG12, 148DIG62, 29843, 228238, 437216, 437245, 437247, H01L 2336, H01L 21304, B01J 1700

Patent

active

048106712

ABSTRACT:
An improved method for eutectically bonding a silicon wafer onto a gold preform is described. A gold/silicon seed is placed on a pure gold preform. Then a die is placed onto the pure gold preform and the gold/silicon seed, wherein the seed acts as a catalyst to form an eutectic bond.

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Hoge et al., "Some Considerations of the Gold-Silicon Die Bond . . .", IEDM IEEE, 1980, pp. 303-311.
H. F. Gray, "Some Basic Problems with Eutectic Preform . . .", Naval Research Laboratory, Abst. No. 19, pp. 54-52.
Linn et al., "Analysis of Gold Films Used in Microcircuit Chip . . .", Applied Surface Science, 26, 1986), pp. 211-218.
Aldersley, "Void Reduction in Gold-Silicon Eutectic Die Bonding", Benn. Electronics Publications, 1982, pp. 136-142.
Mencinger et al., "Use of Wetting Angle . . . Au-Si Eutectic Die Attach", IEEE, New York, VIII, pp. 173-179, 1985.

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