Semiconductor device element-isolation by oxidation of polysilic

Details Semiconductor device element-isolation by oxidation of polysilic Semiconductor device element-isolation by oxidation of polysilic

1987-07-13

1989-03-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 72, 357 55, H01L 21473

Patent

active

048106682

ABSTRACT:
A method of manufacturing a semiconductor apparatus is disclosed, in which in the method of isolating elements, is improved. A groove is cut in a semiconductor substrate. Elements are isolated from each other by embedding an insulating material in the groove, in two divided portions. The time required for depositing an insulating material is reduced, thereby forming a uniform insulation layer on the semiconductor substrate. Since the insulating material can be etched in a shorter period of time than was previously required, the etching process can be more finely controlled. Since a field oxide layer is formed by oxidizing an insulation layer formed for the first time, the field oxide layer can be provided without oxidizing those portions of the semiconductor substrate which lie near the groove. Consequently, the seminconductor substrate can be free from crystalline defects.

REFERENCES:
patent: 4356211 (1982-10-01), Riseman
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4546538 (1985-10-01), Suzuki
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4700464 (1987-10-01), Okada et al.

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