High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1980-07-01

1983-06-14

Edlow, Martin H.

357 52, 357 53, 357 68, 357 73, H01L 2974

Patent

active

043886353

ABSTRACT:
A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.

REFERENCES:
patent: 3413527 (1968-11-01), Davies
patent: 3783348 (1974-01-01), Swartz et al.
patent: 4110780 (1978-08-01), Cornu
patent: 4261001 (1981-04-01), Temple
patent: 4329707 (1982-05-01), Moore

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