Transistor with improved second breakdown capability

Details Transistor with improved second breakdown capability Transistor with improved second breakdown capability

1980-12-04

1983-06-14

Munson, Gene M.

357 89, H01L 2972

Patent

active

043886345

ABSTRACT:
A transistor having increased reverse second breakdown capabilities includes a collector formed with a high resistivity region including a channel portion adjacent the central portion of the emitter and with a lower resistivity region forming an interface around said channel portion. The second region is arranged to include a portion located laterally inwardly of the outer edges of the emitter so that a preferential current path is provided that defocuses the minority carriers injected by the emitter during the time the transistor is being switched off.

REFERENCES:
patent: 2813817 (1957-11-01), Leverenz
patent: 3338758 (1967-08-01), Tremere
patent: 3510736 (1970-05-01), Dingwall
patent: 3916431 (1975-10-01), Khajezadeh
patent: 3977020 (1976-08-01), Enzlin et al.
patent: 4032956 (1977-06-01), Yagi et al.
patent: 4151541 (1979-04-01), Roger
patent: 4345266 (1982-08-01), Owyang

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