Super hard highly pure silicon nitrides

Details Super hard highly pure silicon nitrides Super hard highly pure silicon nitrides

1980-03-11

1982-01-26

Bernstein, Hiram

Stock material or miscellaneous articles

Composite

Of silicon containing

C30B 2900

Patent

active

043129242

ABSTRACT:
A super hard-highly pure silicon nitride includes a preferentially oriented crystalline silicon nitride having a grain size of 1-50 .mu.m and a micro Vickers hardness of 3,000 kg/mm.sup.2 under a load of 100 g, a finely grained crystalline silicon nitride having an average grain size of less than 1 .mu.m and a micro Vickers hardness of 3,500 kg/mm.sup.2 under a load of 100 g, and an amorphous silicon nitride having a micro Vickers hardness of 2,200 kg/mm.sup.2 under a load of 100 g, and is produced by blowing a nitrogen depositing source and a silicon depositing source on a substrate heated at 500.degree.-1,900.degree. C. with a blowpipe composed of a pipe assembly wherein a first pipe for the nitrogen depositing source is surrounded with the second pipe for silicon depositing source and the distance from an opening end of the first pipe to the substrate is shorter than a distance from an opening end of the second pipe to the substrate.

REFERENCES:
patent: 3226194 (1965-12-01), Kuntz
patent: 3394991 (1968-07-01), Evans
patent: 4118539 (1978-10-01), Hirai et al.
Aboaf, J. Electrochem. Soc.: Solid State Science, V 116, #12, (Dec. 1966), pp. 1736-1740.
Brown, T. Electrochem. Soc.: Solid State Science, vol. 115, #3 (Mar. 1968), pp. 311-317.
Philipp, J. Electrochem. Soc.: Solid-State Sci. & Tech., vol. 120, #2 (Feb. 1973), 295-300.
Whitner, Western Electric Co. Inc., Tech. Dig. #1, Jul. 1968, pp. 5-6.

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