Method of removing contaminating impurities from device areas in

Details Method of removing contaminating impurities from device areas in Method of removing contaminating impurities from device areas in

1979-09-11

1981-02-10

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 219121L, 357 91, 427 531, H01L 21265

Patent

active

042499623

ABSTRACT:
High energy ions are implanted at both the device areas (11--11) on a semiconductor wafer 10 to form electrical devices (15--15) and at areas (14--14) remote therefrom. The device areas (11--11) are then selectively laser recrystallized to repair damage caused by the ion implantation and the wafer (10) is placed in a furnace for a time and at a temperature sufficient to cause gettering of contaminating impurities to the damage remote areas (14--14).

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