Schottky-type rectifier having controllable barrier height

Details Schottky-type rectifier having controllable barrier height Schottky-type rectifier having controllable barrier height

1982-12-08

1989-03-28

Carroll, J.

357 67, 357 71, H01L 2948, H01L 2956, H01L 2964, H01L 2348

Patent

active

048168793

ABSTRACT:
A Schottky-type diode has a conductor-to-semiconductor barrier height .phi..sub.B that is controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). The silicide layer is constituted with two or more metals such as platinum and nickel.

REFERENCES:
patent: 3841904 (1974-10-01), Chiang
patent: 3906540 (1975-09-01), Hollins
patent: 4248688 (1981-02-01), Gartner et al.
patent: 4359486 (1982-11-01), Patalony et al.
patent: 4492971 (1985-01-01), Bean et al.
L. Stolt et al., "Variation of Pt Si-nSi Barrier Height with Fabrication Parameters, and Characterization of the Electrical Behavior of the Junction", Physica Scripta, vol. 18, (1978), pp. 410-412.
D. V. Morgan et al., "Schottky Barrier Height: A Design Parameter for Device Applications", Solid-State Electronics, vol. 22, (1979), pp. 865-873.
R. Muller et al., "Device Electronics for Integrated Circuits", (John Wiley and Sons, New York), 1977.

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