Continuous deposition of activated process gases

Details Continuous deposition of activated process gases Continuous deposition of activated process gases

1984-06-25

1987-07-07

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 427 17, 427 55, 427294, B05D 306

Patent

active

046786791

ABSTRACT:
Apparatus for and a method of continuously depositing semiconductor alloy material characterized by stress-free bonds, tetrahedral coordination and a low density of defect states. The semiconductor material is deposited onto the substrate from energetic percursor process gas, density of states reducing elements, as well as dopant gas and compensating elements. Each of said energized species are discretely introduced into a deposition region for uncontaminated deposition and surface reaction on the substrate.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.

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