Method of making field-effect transistors with micron and submic

Details Method of making field-effect transistors with micron and submic Method of making field-effect transistors with micron and submic

1979-11-29

1982-01-26

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 357 15, H01L 21285

Patent

active

043121128

ABSTRACT:
Field-effect transistors using Schottky junctions formed of tantalum on N-doped gallium arsenide with tantalum oxide and native oxide passivations.

REFERENCES:
patent: 3717563 (1973-02-01), Revitz et al.
patent: 3923975 (1975-12-01), Calviello
patent: 3943622 (1976-03-01), Kim et al.
patent: 4075650 (1978-02-01), Calviello

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