Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1987-08-21
1989-03-28
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, 250397, H01J 37317
Patent
active
048166936
ABSTRACT:
A uniform ion implantation dose control apparatus controls the implantation of ion particles onto at least one wafer mounted on a rotating disk in the pathway of the ion particle beam. A grounded scanning wire is repeatedly moved across the beam to produce an emission of secondary electrons which is linearly proportional to the beam particle current. The secondary electrons emitted are collected and formed into a current I.sub.s by a collector electrode. Portions of the current I.sub.s on the collector electrode are sampled. While the vacuum conditions within the beamline are good, the beams electrical current I.sub.FC is measured and the collector current I.sub.s sample is calibrated therewith so that when the beamline vacuum becomes a high pressure vacuum, additional collector current I.sub.s samples may be utilized to determine a theoretical beam current I which is a function of the beam particle current I.sub.p =I/q. This theoretical beam current I is utilized to move the rotating disk along a radial pathway perpendicular to the beam pathway at a velocity V which is proportional to the theoretical beam current I.
REFERENCES:
patent: 3207982 (1965-09-01), Rose
patent: 3689766 (1972-09-01), Freeman
patent: 3778626 (1973-12-01), Robertson
patent: 3789298 (1974-01-01), Herb
patent: 4011449 (1977-03-01), Ko et al.
patent: 4021675 (1977-05-01), Shifrin
patent: 4234797 (1980-11-01), Ryding
patent: 4357536 (1982-11-01), Varma et al.
patent: 4494005 (1985-01-01), Shibata et al.
patent: 4517465 (1985-05-01), Gault et al.
J. H. Keller, C. M. McKenna, J. R. Winnard, W. W. Hicks, J. E. Hoffman, J. R. Kranik, and W. F. Mueller, Development of a Prototype High-Current Low-Energy Ion Implanter, 44 Radiation Effects, 195-200, (1979).
K. Matsuda, T. Kawai, M. Naitoh, and M. Aoki, A High Current Ion Implanter Machine, Nuclear Instruments and Methods in Physics Research B6, 35-38, (1985).
K. Steeples, Dose Control With High Power Ion Beams on Photoresist Masked Targets, Journal of Vacuum Science and Technology, vol. B2, No. 1, 58-62, (1984).
E. J. Sternglass, Theory of Secondary Electron Emission by High-Speed Ions, Physical Review vol. 108, No. 1, 1-9, (1957).
O. Almen and G. Bruce 11, Nucl. Inst. & Meth., 279, (1961).
B. Perovic and B. Cobie, Cathode Sputtering of Cu and Ag by A+ Ions of Energies from 10-200 KeV, Proc. Vth Intl. Conf. on Ionization Phenom. in Gasses, Munich, 1165-1171, (1962).
David T. Goldman and Albert Simon, Theory of Sputtering by High-Speed Ions, Physical Review, vol. 111, No. 2, 383-386, (1958).
P. K. Rol. J. M. Fluit, and J. Kistemaker, Sputtering of Copper by Bombardment with Ions of 5-25 KeV, 26 Physica 1004-1010, (1960).
G. I. Robertson, Rotating Scan for Ion Implantation, Western Electric Engineering, Princeton, N.J. 08540.
J. G. McCallum, G. I. Robertson, A. F. Rodde, B, Weissman, and N. Williams, Journal of Vacuum Science and Technology, vol. 15, No. 3, 1087-1089 (1978).
W. N. Hammer, On-Line Ion Implantation Dose Uniformity Monitor, IBM Technical Disclosure Bulletin, vol. 18, No. 7, (1975).
Anderson Bruce C.
Berman Jack I.
National Electrostatics Corp.
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