Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-12-19
1996-07-30
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257330, 257341, 257398, H01L 2976
Patent
active
055414257
ABSTRACT:
A trench is formed on a main surface of a p+ type monocrystalline silicon substrate. A silicon oxide film is formed extending from the inner surface of trench onto the main surface of p+ type monocrystalline silicon substrate. The thickness of a corner portion positioned on the upper end corner portion of the sidewall of trench in silicon oxide film is larger than the thickness of silicon oxide film positioned on the sidewall of trench. An n type polycrystalline silicon layer extending from the inside of trench onto the main surface of p+ type monocrystalline silicon substrate is formed on silicon oxide film. Thus, a semiconductor device having a trench structure with an improved breakdown voltage for an insulating layer positioned on an upper end corner portion of the sidewall of a trench is obtained.
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patent: 5306940 (1994-04-01), Yamazaki
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IBM Technical Disclosure Bulletin, "High Density Cross Point Semiconductor Memory Cell," vol. 30, No. 7, Dec., 1987.
Limanek Robert P.
Mitsubishi Denki & Kabushiki Kaisha
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