Laser processing method, and method for forming insulated gate s

Details Laser processing method, and method for forming insulated gate s Laser processing method, and method for forming insulated gate s

1993-10-28

1996-07-30

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 44, 437950, H01L 21306

Patent

active

055411380

ABSTRACT:
A laser doping process comprising: irradiating a laser beam operated in a pulsed mode to a single crystal semiconductor substrate of a first conductive type in an atmosphere of an impurity gas which imparts the semiconductor substrate a conductive type opposite to said first conductive type and incorporating the impurity contained in said impurity gas into the surface of said semiconductor substrate, thereby modifying the type and/or the intensity of the conductive type thereof. Provides devices having a channel length of 0.5 .mu. or less and impurity regions 0.1 .mu. m or less in depth.

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"Fabrication of Submicrometer MOSFET's Using Gas Immersion Laser Doping (GILD)" IEEE Electron Device Letters Vol. EDL-7, No. 7 pp. 440-442, Jul. 1986.

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