Technique to fabricate a container structure with rough inner an

Details Technique to fabricate a container structure with rough inner an Technique to fabricate a container structure with rough inner an

1993-09-15

1994-10-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053547055

ABSTRACT:
The present invention provides a method for forming conductive container structures on a supporting substrate of a semiconductor device, by: forming an insulating layer over parallel conductive lines and existing material on the surface of the supporting substrate; providing openings into the insulating layer, the openings forming vertical sidewalls in the insulating layer that resides between two neighboring conductive lines and thereby exposing an underlying conductive material; forming a sacrificial layer that makes contact with the underlying conductive material; forming a barrier layer overlying and conforming to the sacrificial layer; forming insulating spacers on the vertical sidewalls of the barrier layer; removing portions of the barrier layer and the sacrificial layer that span between the insulating spacers to thereby expose a portion of the underlying conductive material; removing the insulating spacers and thereby exposing the barrier layer; forming a conductive layer that conforms to the exposed barrier layer, makes contact to the underlying conductive material and forms multiple containers; forming a filler material in the container; removing portions of the conductive layer, the barrier layer and the sacrificial layer down to an upper portion of the insulating layer, thereby forming individual the container structures; removing the insulating layer, thereby exposing the sacrificial layer surrounding the outer surfaces of the container structures; and removing the sacrificial layer, the remaining barrier layer and the filler layer, thereby exposing the outer and inner surfaces of the container structures.

REFERENCES:
patent: 5162248 (1992-11-01), Dennison et al.
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" by Kaga et al., IEEE Trans. on Electron Devices, vol. 38, No. 2, Feb. 1991. pp. 255-261.
"A Stacked Capacitor Cell with Ring Structure" by Shinmura et al, Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, (1990 International), pp. 833-836.

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