Method of providing buried contacts for N and P channel devices

Details Method of providing buried contacts for N and P channel devices Method of providing buried contacts for N and P channel devices

1986-01-09

1987-07-07

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29591, 148187, 357 42, H01L 21425

Patent

active

046777350

ABSTRACT:
The disclosure relates to a method for realizing a fully functional buried level of interconnect using only a single level of a silicide over N+ polycrystalline silicon, the latter serving as the gate material for both the N channel and P channel devices formed.

REFERENCES:
patent: 4276688 (1981-07-01), Hsu
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4374700 (1983-02-01), Scott et al.
patent: 4509991 (1985-04-01), Taur
patent: 4554572 (1985-11-01), Chatterjee
patent: 4621276 (1986-11-01), Malhi

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