Monolithically integrated bidirectional lateral semiconductor de

Details Monolithically integrated bidirectional lateral semiconductor de Monolithically integrated bidirectional lateral semiconductor de

1987-05-19

1990-03-27

Clawson, Jr., Joseph E.

357 20, 357 234, 357 43, 357 86, H01L 2974

Patent

active

049125419

ABSTRACT:
A monolithically integrated reverse conducting lateral insulated gate semiconductor device includes an inherent four layer structure which supplies a sufficient base drive to turn on an inherent lateral transistor under forward bias conditions. Under reverse bias conditions, an inherent five layer structure is activated to provide for high current density low voltage reverse conduction in the device. Forward and reverse current flow can be interrupted by the application of an appropriate bias to the same insulated gate electrode. The disclosed semiconductor device achieves improved current density and concomitantly reduced cell size.

REFERENCES:
patent: 4580154 (1986-04-01), Coe
patent: 4604638 (1986-08-01), Matsuda

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