Field controlled high value resistor with guard band

Details Field controlled high value resistor with guard band Field controlled high value resistor with guard band

1980-03-11

1982-03-23

Clawson, Jr., Joseph E.

357 23, 357 52, 357 53, 357 86, H01L 2702

Patent

active

043216161

ABSTRACT:
A high resistance region is formed by implanting ions of an impurity of one conductivity type at a low concentration into a surface of a substrate of a semiconductivity type of the opposite conductivity. An electroconductive film is formed on the high resistance region with an electric insulating film therebetween for applying a reverse bias potential to a PN junction between the semiconductor substrate and the high resistance region.

REFERENCES:
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patent: 4212025 (1980-07-01), Hirasawa et al.
J. MacDougall et al., "Ion Implantation Offers a Bagfol of Benefits for Mos, " Electronics, Jun. 22, 1970, pp. 86-90.

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