Photodetector semiconductor which does not require extensive coo

Details Photodetector semiconductor which does not require extensive coo Photodetector semiconductor which does not require extensive coo

1990-10-22

1991-05-14

Mintel, William

357 16, 357 58, 357 90, H01L 2714

Patent

active

050160737

ABSTRACT:
A photodetector of semiconductor material includes a photosensitive region adjacent to a minority carrier extraction region arranged when biased to depress the photosensitive region minority carrier concentraction, and means for inhibiting injection of minority carriers to the photosensitive region. Depression of the minority carrier concentration produces low noise and high responsivity properties as obtained by cooling, but without the need for cooling equipment. The minority carrier extraction region may be a pn homo- or heterojunction. Minority carrier injection may be inhibited by a homo- or hetero-structure excluding contact to the photosensitive region, or alternatively by providing the photosensitive region with at least one subsidiary pn junction biasable to inhibit minority carrier flow. The photosensitive region may have an array of extraction regions spaed by less than a minority carrier diffusion length. The extraction regions may have separate outputs to provide respective pixels in a display.

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