Vertical power MOSFET having high withstand voltage and high swi

Details Vertical power MOSFET having high withstand voltage and high swi Vertical power MOSFET having high withstand voltage and high swi

1989-03-31

1991-05-14

James, Andrew J.

357 238, 357 2312, 357 41, 357 52, 357 89, H01L 2910, H01L 2978, H01L 2934

Patent

active

050160664

ABSTRACT:
In a vertical field effect transistor including a source electrode and a gate on the front surface of a semiconductor substrate having one conductivity type and a drain electrode on the back surface of the substrate, the semiconductor device of the present invention has the structure wherein a connection region of one conductivity type positioned between two channel forming base regions of the opposite conductivity type is formed by a semiconductor layer having a higher impurity concentration than the drain region of the one conductivity type, and the surface portion of the connection region which is connected to the channel has a lower impurity concentration than the connection region.

REFERENCES:
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4455566 (1984-06-01), Sakurai
patent: 4593302 (1986-06-01), Lidow et al.

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