Compound semiconductor substrate with InGaP layer

Details Compound semiconductor substrate with InGaP layer Compound semiconductor substrate with InGaP layer

1989-11-02

1991-05-14

Mintel, William

357 4, 357 30, 357 34, 357 22, H01L 29161

Patent

active

050160656

ABSTRACT:
Disclosed is a compound semiconductor substrate having a III-V group compound semiconductor layer on a IV group substrate, which has substantially no residual stress and few crystalline defects. The substrate is formed from (a) a IV group substrate, (b) a first III-V group compound semiconductor layer formed on the substrate, (c) a second compound semiconductor layer having such a lattice constant as to produce a stress in a direction opposite to the stress which occurs during the time of forming said first semiconductor layer due to a difference of thermal expansion coefficient between said substrate and said first semiconductor layer, formed on said first semiconductor layer, and (d) a third III-IV group compound semiconductor layer similar to the first semiconductor layer, formed on said second semiconductor layer.

REFERENCES:
patent: 4928154 (1990-05-01), Umeno et al.
Kondo et al., "660 nm In.sub.0.5 Ga.sub.0.5 P Light-Emitting Diodes on Si Substrates", Appl. Phys. Lett., 53(4), 25 Jul. 1988, pp. 279-281.
Chyi et al., "Molecular Beam Epitaxial Growth and Characterization of InSb on Si", Appl. Phys, Lett., 54(11), 13 Mar. 1989, pp. 1016-1018.
"High-Quality GaInAsP/InP Heterostructures Grown by Metalorganic Chemical Vapor Deposition on Silicon Substrates", Appl. Phys. Lett., 52(3), 18 Jan. 1988, pp. 209-211.
Razeghi et al., "First Room-Temperature CW Operation of a GaInAsP/InP Light-Emitting Diode on A Silicon Substrate", Appl. Phys. Lett., 53(10), 5 Sep. 1988, pp. 854-856.
Seki et al., "Epitaxial Growth of InP . . . ", J. of Crystal Growth, vol. 93, Nos. 1-4, 1988, pp. 527-531.
van der Ziel et al., "Optically Pumped Laser . . . ", Appl. Phys. Ltrs., vol. 48, No. 7, Feb. 1986, pp. 454-456.
R. Fischer et al., Appl. Phys. Lett., 48 (18), 5 May 1986, pp. 1223-1225.
R. P. Gale et al., IEEE Electron Device Lett., vol. EDL-2, No. 7, Jul. 1981, pp. 169-171.
Seki et al., Jpn. J. Appl. Phys. Lett., 26, No. 10, Oct. 1987, pp. 1587-1589.

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