Method for making semiconductor device

Details Method for making semiconductor device Method for making semiconductor device

1997-12-29

2000-03-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117106, 117107, 117955, 117956, 438 35, 438 37, 438506, 438522, 438796, 438925, 438944, C30B 2518

Patent

active

060367725

ABSTRACT:
A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercury and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium onto a Group III-V compound semiconductor layer comprising at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium and at least one Group V element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony and bismuth; wherein

REFERENCES:
patent: 5063166 (1991-11-01), Mooney et al.
patent: 5372970 (1994-12-01), Kubo
patent: 5597740 (1997-01-01), Ito et al.
patent: 5705831 (1998-01-01), Uemora et al.
patent: 5707900 (1998-01-01), Sano et al.
patent: 5732099 (1998-03-01), Kawasumi et al.

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