Semiconductor device and its manufacture utilizing crystal orien

Details Semiconductor device and its manufacture utilizing crystal orien Semiconductor device and its manufacture utilizing crystal orien

1997-01-27

1998-07-21

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257392, 257627, H01L 29088, H01L 2904

Patent

active

057838453

ABSTRACT:
A technique for manufacturing a semiconductor device includes the steps of preparing a stepped substrate made of a group III-V compound semiconductor and having a flat surface exposing a (1 0 0) plane and a slanted surface exposing an (n 1 1)B plane whrerein n is a real number of about 1.ltoreq.n, and epitaxially growing the group III-V compound semiconductor to form an epitaxial layer on the surface of the stepped substrate while doping p- and n-type impurities, selectively at the same time or, alternatively, under conditions such that the grown epitaxial layer has an n-type region on the slanted surface and a p-type region on the flat surface.

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