Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1989-02-07
1990-03-27
Nguyen, Nam X.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, 2504923, 250423R, 31511141, 31511181, C23C 1434, H01J 2700
Patent
active
049118145
ABSTRACT:
A thin film forming apparatus comprises a plasma generating chamber into which is introduced a gas to generate plasma therein; a microwave introduction window connected to the plasma generating chamber for introducing the microwave into the latter, a first target and a second target made of materials to be sputtered and disposed at both end portions of interior of the plasma generating chamber, respectively, at least one of the first and second targets being in the form of a tube, at least one power supply for applying a negative voltage to the first and second targets, magnetic field producing means for producing the magnetic field and the magnetic flux leaving one of the first and second targets and entering the other, and a specimen chamber communicated to the plasma generating chamber and having a substrate holder installed therein. High-density ECR plasma generated within the plasma generating chamber sputters the targets so that the sputtered target materials are deposited on a substrate to form a thin film. It is also possible to extract ions in plasma by incorporating an ion extraction mechanism at the lower end of the plasma generating chamber.
REFERENCES:
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patent: 4492620 (1985-01-01), Matsuo et al.
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"A New Sputtering Type of Ion Source for Ion Beam Deposition of Thin Films", N. Terada et al.; Proc. Int'l Ion Engineering Congress, Isiat '83, 1983, pp. 999-1004.
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Matsuoka Morito
Ono Ken'ichi
Nguyen Nam X.
Nippon Telegraph and Telephone Corporation
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