Extended drain self-aligned silicon gate MOSFET

Details Extended drain self-aligned silicon gate MOSFET Extended drain self-aligned silicon gate MOSFET

1978-11-13

1980-11-04

Edlow, Martin H.

357 4, 357 59, H01L 2978

Patent

active

042323274

ABSTRACT:
A Metal-Oxide-Semiconductor-Field Effect Transistor (MOSFET) is described wherein a body of semiconductor material is provided with source, drain and channel regions. A gate structure is provided over the interstitial channel region of the semiconductor body between the drain and source regions, one edge of which is aligned with the source region. The remainder of the channel region, between the other edge of the gate structure and the adjacent edge of the drain region is provided with a drift region of a conductivity type that is opposite to that of the source and drain.

REFERENCES:
patent: 3296508 (1967-01-01), Hofstein
patent: 3339128 (1967-08-01), Olmsted
patent: 3434021 (1969-03-01), Hofstein
patent: 3455020 (1969-07-01), Dawson
patent: 3484662 (1969-12-01), Hogan
patent: 3633078 (1972-01-01), Dill
patent: 3719866 (1973-03-01), Naber
patent: 3738880 (1973-06-01), Laher
patent: 3855610 (1974-12-01), Masuda
patent: 3988761 (1976-10-01), Kanazawa
patent: 4193080 (1980-03-01), Koike

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