Method of fabricating a multi-layer metal silicide infrared dete

Details Method of fabricating a multi-layer metal silicide infrared dete Method of fabricating a multi-layer metal silicide infrared dete

1990-04-03

1991-05-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 3, 437178, 437201, 148DIG80, 148DIG147, H01L 3118

Patent

active

050155920

ABSTRACT:
The efficiency of a metal silicide infrared detector (10) in greatly enhanced by depositing on the substrate (14) a stack (30) of alternating metal silicide (12,24) and silicon layers (22). The metal silicide layers (12,24) are connected to each other and to a contact pad (20) in the substrate (14) by a metal silicide deposit (32) on one side of the stack (30) and the silicon layers (22) are connected to each other and to the substrate (14) by a silicon deposit (34) on another side of the stack (30). The stacking of layers is made possible by depositing the silicon layers (22) at a rate of 1 .ANG./sec or less in a vacuum of 10.sup.-9 torr or better at a temperature of about 250.degree. C.

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J. C. Bean, and J. M. Poate, "Silicon/Metal Silicide Heterostructures Grown by Molecular Beam Epitaxy", Appl. Phys. Lett. 37 , #7, pp. 643-646.

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