Semiconductor nonvolatile storage and method of fabricating the

Details Semiconductor nonvolatile storage and method of fabricating the Semiconductor nonvolatile storage and method of fabricating the

1998-03-06

2000-11-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

H01L 3300, H01L 2978

Patent

active

061440876

ABSTRACT:
A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the field oxide film and a mask oxide film on the surface of the gate electrode, forming an opening in the mask oxide film and forming a memory oxide film on the gate electrode exposed thereat, providing a memory gate electrode of a size extending from over the memory oxide film to over the mask oxide film, and making the thickness of the memory oxide film thinner than the thickness of the mask oxide film.

REFERENCES:
patent: 5550404 (1996-08-01), Yen et al.

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