Semiconductor device having an active layer with no grain bounda

Details Semiconductor device having an active layer with no grain bounda Semiconductor device having an active layer with no grain bounda

1998-03-02

2000-11-07

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

257 50, 257 51, 257 56, 257 58, 257 62, 257 64, 257 65, 257347, H01L 2184, H01L 2978

Patent

active

061440418

ABSTRACT:
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.

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patent: 5972105 (1999-10-01), Yamazuki, et al.

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