Method of processing semiconductor device with laser

Details Method of processing semiconductor device with laser Method of processing semiconductor device with laser

1998-08-13

2000-11-07

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

117 4, 117 94, 117106, H01L 21302

Patent

active

061436615

ABSTRACT:
A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.

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