Process for producing semiconductor substrate

Details Process for producing semiconductor substrate Process for producing semiconductor substrate

1999-09-03

2000-11-07

Niebling, John F.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438455, 438456, 438457, 438458, 438459, 438460, 438149, 438150, 438151, 438152, 438153, 438154, 438155, 257758, H01L 2130

Patent

active

061436291

ABSTRACT:
In a process for producing a semiconductor substrate, comprising sealing surface pores of a porous silicon layer and thereafter forming a single-crystal layer on the porous silicon layer by epitaxial growth, intermediate heat treatment is carried out after the sealing and before the epitaxial growth and at a temperature higher than the temperature at the time of the sealing. This process improves crystal quality of the semiconductor substrate having the single-crystal layer formed by epitaxial growth and improves smoothness at the bonding interface when applied to bonded wafers this process enables the detection of the smaller particles on the surface by a laser light scattering method.

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