Method for forming alignment mark

Details Method for forming alignment mark Method for forming alignment mark

2000-01-07

2000-11-07

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438401, 438462, 438800, 257797, H01L 2176

Patent

active

061436224

ABSTRACT:
A method for forming an alignment mark includes defining a circuit pattern area and an alignment mark area on a semiconductor substrate, forming a first pattern in the alignment mark area, forming a second pattern of a first material on the first pattern, forming a layer of a second material different from the first on the entire surface of the semiconductor substrate, and polishing the layer of the second material and the second layer such that the second pattern and the layer of second material are polished at different speed, until a step difference appears between the second pattern and the layer.

REFERENCES:
patent: 5786260 (1998-07-01), Jang et al.
"The Science of CMP" at pp. 299-303 and pp. 327-337 published by Science Forum on Aug. 20, 1997.

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