Semiconductor device having a programmable fuse element

Details Semiconductor device having a programmable fuse element Semiconductor device having a programmable fuse element

1986-09-24

1988-02-02

James, Andrew J.

357 2311, 357 52, 357 68, 357 235, H01L 2348

Patent

active

047231556

ABSTRACT:
A fuse element is formed on a field insulation film on a semiconductor substrate of n conductivity type in which MOS transistors are formed. A first guard ring region of second conductivity type is provided in the substrate, surrounding the semiconductor substrate region under the fuse element. A second guard ring region of first conductivity type is formed in the substrate, surrounding the first guard ring region. Proper potentials are applied to the first and second guard ring regions.

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Abbott et al., "Equipping a Line of Memories with Spare Cells", Electronics, Jul. 28, 1981, pp. 127-130.
May et al., "High-Speed Static Programmable Logic Array in LOCMOS", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 3, Jun. 1976, pp. 365-368.

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