Solder layer for a semi-conductor device consisting of at least

Details Solder layer for a semi-conductor device consisting of at least Solder layer for a semi-conductor device consisting of at least

1977-02-07

1978-08-29

James, Andrew J.

357 65, H01L 2348, H01L 2946, H01L 2962

Patent

active

041107837

ABSTRACT:
A semi-conductor device comprising a silicon body having an exposed surface of N-type conductivity layer and a substrate bonded to the exposed surface by means of a layer of a new solder material, the solder material being an alloy consisting essentially of 2 to 12% by weight of at least one element of Group V of the periodic table, preferably antimony, and 0.01 to 5% by weight of at least one of rare earth elements, for example, Misch metal and aluminum being balance on the basis of total weight of the solder material. An increase in FVD of the device in which a conventional aluminum solder is used is prevented by the use of the new solder materials.

REFERENCES:
patent: 2321071 (1943-06-01), Ehrhardt
patent: 2381025 (1945-08-01), Addink
patent: 2555001 (1951-05-01), Ohl
patent: 3211595 (1965-10-01), Bernstein
patent: 3307088 (1967-02-01), Fujikawa et al.
patent: 3574676 (1971-04-01), Gambino et al.
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4005454 (1977-01-01), Froloff et al.

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