Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With doping profile to adjust barrier height
Patent
1992-11-05
1994-01-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With doping profile to adjust barrier height
257476, 257483, 257484, 257916, H01L 2948
Patent
active
052784436
ABSTRACT:
A semiconductor device includes a diode having a Schottky barrier and a MOS transistor integrally formed in one and the same semiconductor substrate in which the diode and MOS transistor have their main electrode in common use. The diode has a first diode portion having a pn junction in a current-passing direction and a second diode portion having a combination of the Schottky barrier and another pn junction in the current passing direction.
REFERENCES:
patent: H40 (1986-04-01), Buchanan, Jr. et al.
patent: 4626884 (1986-12-01), Shannon
patent: 4862229 (1989-08-01), Mundy et al.
patent: 5017976 (1991-05-01), Sugita
patent: 5077586 (1991-12-01), Quessada
patent: 5101244 (1992-03-01), Mori et al.
patent: 5164802 (1992-11-01), Jones et al.
patent: 5166760 (1992-11-01), Mori et al.
3rd European Conference on Power Electronics and Applications, Oct. 9-12, 1989, pp. 611-616, Schlangenotto, et al., "Improved Reverse Recovery of Fast Power Diodes Having a Self-Adjusting P Emitter Efficiency".
Baliga, et al., "The Merged P-In Schottky (MPS) Rectifier: A High-Voltage, High Speed Power Diode", IEEE International Electron Devices Meeting, IEDM 87, pp. 658-661, 1987.
Arakawa Hidetoshi
Mori Mutsuhiro
Owada Hiroshi
Sakurai Naoki
Yasuda Yasumiti
Hitachi , Ltd.
Hitachi Haramachi Semiconductor Ltd.
Mintel William
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