Diamond rectifying contact with undoped diamond layer

Details Diamond rectifying contact with undoped diamond layer Diamond rectifying contact with undoped diamond layer

1993-02-23

1994-01-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257471, 257485, 257750, 257764, H01L 310312, H01L 27095, H01L 2948, H01L 2348

Patent

active

052784312

ABSTRACT:
A rectifying contact includes a first semiconducting diamond layer, a second undoped diamond layer on the first layer, and a third relatively highly doped diamond layer on the second layer. The first semiconducting diamond layer may be formed on a supporting substrate. A bonding contact is preferably formed on the third relatively highly doped diamond layer for facilitating electrical connection thereto. The bonding contact is preferably a titanium carbide/gold bilayer. In one embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by an electrically conductive substrate and an associated metal layer on an opposite side of the substrate from the semiconducting diamond layer. In another embodiment, an ohmic contact may be formed on the first semiconducting diamond layer by a fourth relatively highly doped diamond layer and an associated bonding contact on the fourth diamond layer. The relatively highly doped diamond layers may be formed by ion implantation, annealing, and an etch of a graphitized surface portion of the implanted diamond layers.

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