1981-11-20
1984-07-03
James, Andrew J.
357 13, 357 90, 357 52, 357 20, H01L 2714, H01L 3100, H01L 2990
Patent
active
044582609
ABSTRACT:
The invention is an APD array having a plurality of p-n junctions. The p-n junctions comprise a plurality of separate regions which extend a distance into a semiconductor body from a surface thereof and have a conductivity type opposed to that of the body. A region of the same conductivity type as that of the body extends a further distance into the body and is composed of sub-regions which overlap one another in the direction parallel to the surface of the body. The elements so formed have a more uniform avalanche gain and, because of the overlap of the sub-regions of first conductivity type, the likelihood of electric breakdown at the surface is reduced and the electrical isolation between the elements is increased. Moreover, because of the proximity of the adjacent elements the likelihood of breakdown at the junction edges is reduced.
REFERENCES:
patent: 3601668 (1971-08-01), Slaten et al.
patent: 3608189 (1971-09-01), Gray
patent: 3703669 (1972-11-01), London
patent: 4021844 (1977-05-01), Gilles et al.
patent: 4129878 (1978-12-01), Webb
patent: 4232328 (1980-11-01), Hartman et al.
McIntyre Robert J.
Webb Paul P.
Burke William J.
Cohen Donald S.
James Andrew J.
Mintel W.
Morris Birgit E.
LandOfFree
Avalanche photodiode array does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Avalanche photodiode array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche photodiode array will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1633031