SOI device and a fabrication process thereof

Details SOI device and a fabrication process thereof SOI device and a fabrication process thereof

1993-02-12

1994-01-11

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437 67, 437 78, 437 90, 437109, 437182, 437243, 257510, 257520, H01L 21465, H01L 2934

Patent

active

052781020

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of forming a depression on a substrate, bonding a plate of a single crystal semiconductor material on the substrate to establish a contact such that a closed space is formed in the substrate in correspondence to the depression, reducing the thickness of the plate, forming a penetrating opening through the plate in communication to the space to form a bridging part in the plate as a region left from the formation of the penetrating opening, forming an insulation film to cover at least a lower major surface and both side walls of the bridging part, filling the space by depositing polysilicon through the penetrating opening, providing a conductivity to the polysilicon that fills the space, removing the polysilicon that has been deposited on the upper surface of the bridging part to expose a crystal surface of the semiconductor material forming the plate, and forming an active device on the bridging part.

REFERENCES:
patent: 5107312 (1992-04-01), O'Mara et al.
patent: 5120666 (1992-06-01), Gotou
Horie (1990 Symposium on VLSI Technology) Jun. 1990.

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