Process to manufacture crown stacked capacitor structures with H

Details Process to manufacture crown stacked capacitor structures with H Process to manufacture crown stacked capacitor structures with H

1993-05-04

1994-01-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437235, 437977, H01L 2170

Patent

active

052780910

ABSTRACT:
The present invention develops a container capacitor by forming a first insulative layer over conductive word lines; forming an opening between neighboring conductive word lines; forming a conductive plug between neighboring parallel conductive word lines; forming a planarized blanketing second insulating layer over the first insulative layer and the conductive plug; forming an opening into the second insulating layer, the opening thereby forming a container shape; forming a conductive spacer adjacent the wall of the container form, the conductive spacer having inner and outer surfaces; removing the second insulating layer, thereby exposing the outer surface of the conductive spacer; forming a layer of hemispherical grained conductive material superjacent the inner and outer surfaces of the conductive spacer; forming insulating spacers adjacent the inner and outer surfaces of the hemispherical grained conductive material; patterning the hemispherical grained conductive material to form a separate conductive container structure serving as a first capacitor cell plate; removing the insulating spacers; forming a capacitor cell dielectric layer adjacent and coextensive the conductive container structure and the first insulating layer; and forming a second conductive layer superjacent and coextensive the capacitor cell dielectric layer, the second conductive layer forming a second capacitor cell plate. The process of the present invention can be further modified to form a DRAM double container capacitor storage cell.

REFERENCES:
patent: 5126280 (1992-06-01), Cham et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5185282 (1993-02-01), Lee et al.
patent: 5229314 (1993-07-01), Okudaria et al.
"A Stacked Capacitor Cell with Ring Structure" by N. Shinmure et al., pp. 833-836. Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan.
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" by T. Kaga et al., pp. 255-261 1991 IEEE.

Affiliated with

Also associated with

Rating

Process to manufacture crown stacked capacitor structures with H does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process to manufacture crown stacked capacitor structures with H, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process to manufacture crown stacked capacitor structures with H will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1630909