Semiconductor laser diode

Details Semiconductor laser diode Semiconductor laser diode

1996-08-15

1998-09-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

058125752

ABSTRACT:
Semiconductor laser diode in which an SCL (Strain Compensated Layer) is formed at an active layer of a 635 nm band semiconductor laser diode for having very low threshold current, is disclosed, including a first conduction type clad layer; a first optical guide layer; a strain compensated layer; an active layer having a strain applied thereto; a strain compensated layer; a second optical guide layer; and, a second conduction type clad layer, wherein the above layers are formed on a first conduction type substrate in succession.

REFERENCES:
patent: 5521935 (1996-05-01), Irikawa
patent: 5559818 (1996-09-01), Shono et al.

Affiliated with

Also associated with

Rating

Semiconductor laser diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1630618